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Infineon BFR193E6327HTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23
Product Details
Product Details
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
SpecificationsAttribute Value Transistor Type NPN Maximum DC Collector Current 80 mA Maximum Collector Emitter Voltage 12 V Package Type SOT-23 Mounting Type Surface Mount Maximum Power Dissipation 580 mW Minimum DC Current Gain 70 Transistor Configuration Single Maximum Collector Base Voltage 20 V Maximum Emitter Base Voltage 2 V Maximum Operating Frequency 8 GHz Pin Count 3 Number of Elements per Chip 1 Minimum Operating Temperature 0 °C Length 2.9mm Height 1mm Maximum Operating Temperature +150 °C Width 1.3mm Dimensions 2.9 x 1.3 x 1mm
| Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum DC Collector Current | 80 mA |
| Maximum Collector Emitter Voltage | 12 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 580 mW |
| Minimum DC Current Gain | 70 |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 20 V |
| Maximum Emitter Base Voltage | 2 V |
| Maximum Operating Frequency | 8 GHz |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | 0 °C |
| Length | 2.9mm |
| Height | 1mm |
| Maximum Operating Temperature | +150 °C |
| Width | 1.3mm |
| Dimensions | 2.9 x 1.3 x 1mm |